Using laser to trigger a large positive magnetoresistive effect in nonmagnetic Si-based metal-oxide-semiconductor structure

被引：2

作者：

Zou, Bugao ^{[1
]}

Zhou, Peiqi ^{[1
]}

Zou, Jiaren ^{[1
]}

Gan, Zhikai ^{[1
]}

Mei, Chunlian ^{[1
]}

Wang, Hui ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Minist Educ, State Key Lab Adv Opt Commun Syst & Networks, Sch Phys & Astron,Key Lab Thin Film & Microfabrica, Shanghai 200240, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 24期

基金：

中国国家自然科学基金;

关键词：

GIANT MAGNETORESISTANCE; HALL-COEFFICIENT; SILICON; FILMS;

D O I：

10.1063/1.4999533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A colossal positive magnetoresistive effect triggered by a laser was observed in a nonmagnetic Si-based metal-oxide-semiconductor structure. The positive magnetoresistance was greatly promoted compared to the case with no laser illumination. In addition, it shows high sensitivity to the magnetic field intensity above a certain threshold at room temperature, making it an appealing candidate for magnetic field detection. Moreover, the magnetoresistance can be regulated by the position of laser beams, which enables us to tailor the devices to meet various needs. We attribute this effect to the anisotropy of the carrier transport characteristics in our structure. The work suggests a different approach to develop laser-controlled magnetic devices and may greatly improve the performance of existing magnetoresistance-based devices. Published by AIP Publishing.

引用

页数：5

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