Internal quantum efficiency droop of GaN LED

被引：0
|
作者：
He, Yi Ting [1 ,2 ]
Gong, Min [1 ,2 ]
Qiu, Zhi Ren [1 ,2 ]
Feng, Zhe Chuan [3 ,4 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[3] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
2014 11TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) | 2014年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Begin with the carrier equation, the relationship between the carrier generation rate G and the integrated photoluminescence intensity 1PL can be obtained. And the internal quantum efficiency (IQE) of InGaN/GaN MQWs can be determined from the dependence of integrated PL intensity on excitation power. The photoluminescence of a LED sample with Charge Asymmetric Resonance Tunneling (CART) structure were studied. The experimental data shows that the peak from InGaN quantum well shifts blue and its integrated intensity increases slowly when the exciting power increases. And the IQE of this LED chip decreases as the exciting power increasing.
引用
收藏
页码：79 / 83
页数：5
相关论文
共 50 条
  • [1] Unified Model for the GaN LED Efficiency Droop
    Piprek, Joachim
    GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939
  • [2] Effect of strain on internal quantum efficiency of InGaN/GaN blue LED
    Anchal, Neha
    Sahoo, Bijay Kumar
    MATERIALS TODAY-PROCEEDINGS, 2020, 28 : 311 - 313
  • [3] THE INFLUENCE OF SUPERLATTICE ON THE INTERNAL QUANTUM EFFICIENCY OF LED STRUCTURES WITH InGaN/GaN QUANTUM WELLS
    Romanov, I. S.
    Prudaev, I. A.
    Marmalyuk, A. A.
    Kureshov, V. A.
    Sabitov, D. R.
    Mazalov, A. V.
    RUSSIAN PHYSICS JOURNAL, 2013, 56 (07) : 760 - 762
  • [4] The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells
    I. S. Romanov
    I. A. Prudaev
    A. A. Marmalyuk
    V. A. Kureshov
    D. R. Sabitov
    A. V. Mazalov
    Russian Physics Journal, 2013, 56 : 760 - 762
  • [5] Efficiency droop in zincblende InGaN/GaN quantum wells
    Dyer, D.
    Church, S. A.
    Ahumada-Lazo, R.
    Kappers, M. J.
    Halsall, M. P.
    Parkinson, P.
    Wallis, D. J.
    Oliver, R. A.
    Binks, D. J.
    NANOSCALE, 2024, 16 (29) : 13953 - 13961
  • [6] GaN基蓝光LED Efficiency droop研究进展
    戚运东
    卢国军
    苗振林
    牛凤娟
    科技与企业, 2014, (22) : 134 - 137
  • [7] Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED
    Wang Jia-Xing
    Wang Lai
    Hao Zhi-Biao
    Luo Yi
    CHINESE PHYSICS LETTERS, 2011, 28 (11)
  • [8] Effect of growth temperature of GaN: Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells
    Romanov, I. S.
    Prudaev, I. A.
    Kopyev, V. V.
    Marmalyuk, A. A.
    Kureshov, V. A.
    Sabitov, D. R.
    Mazalov, A. V.
    1ST INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN 2014 ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES, 2014, 541
  • [9] Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate
    Prudaev, I. A.
    Romanov, I. S.
    Novikov, Vad. A.
    Marmalyuk, A. A.
    Kureshov, V. A.
    Sabitov, D. R.
    Mazalov, A. V.
    RUSSIAN PHYSICS JOURNAL, 2014, 57 (05) : 657 - 661
  • [10] LED Internal Quantum Efficiency Meter
    V. A. Sergeev
    O. A. Radaev
    I. V. Frolov
    Instruments and Experimental Techniques, 2023, 66 : 987 - 994
12345