Stability studies of few-layer InSe nanosheets by Raman spectroscopy

被引：6

作者：

Xie, Qiyun ^{[1
]}

Hu, Chengxiang ^{[1
]}

Xu, Lihuan ^{[1
]}

Chen, Limin ^{[1
]}

Wang, Wei ^{[2
,3
]}

Yin, Handi ^{[4
]}

Cheng, Guofeng ^{[4
]}

Ai, Xiaoqian ^{[5
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China

[2] Nanjing Tech Univ, Key Lab Flexible Elect, Nanjing 211816, Peoples R China

[3] Nanjing Tech Univ, Inst Adv Mat, Jiangsu Natl Synerget Innovat Ctr Adv Mat, Nanjing 211816, Peoples R China

[4] Shanghai Inst Ceram Chinese Acad Sci, Anal & Testing Ctr Inorgan Mat, Shanghai 200050, Peoples R China

[5] Jiangsu Second Normal Univ, Coll Phys & Elect Engn, Nanjing 210013, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2021年 / 336卷

基金：

中国国家自然科学基金;

关键词：

Semiconductor; Stability; Raman spectra; OPTICAL-PROPERTIES; SCATTERING; DEFECTS;

D O I：

10.1016/j.ssc.2021.114417

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The knowledge of the chemical stability of few-layer InSe nanosheets is important for its potential practical device applications. Here, the degradation characteristics of the as-exfoliated ultrathin InSe are studied through Raman spectroscopy. Under the laser excitation of 1 mW, very fast laser-induced degradation has been demonstrated. Moreover, it is found that fewer layered InSe is unstable even after exposure to air for a few hours. The oxidation products during the degradation process are also carefully examined, which are shown to be In2Se3 and In2O3.

引用

页数：5

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