Incorporation of Thieno[3,2-b]pyrrole into Diketopyrrolopyrrole-Based Copolymers for Efficient Organic Field Effect Transistors

被引:24
|
作者
Bulumulla, Chandima [1 ]
Kularatne, Ruvanthi N. [1 ]
Gunawardhana, Ruwan [1 ]
Nguyen, Hien Q. [1 ]
McCandless, Gregory T. [1 ]
Biewer, Michael C. [1 ]
Stefan, Mihaela C. [1 ,2 ]
机构
[1] Univ Texas Dallas, Dept Chem & Biochem, Richardson, TX 75080 USA
[2] Univ Texas Dallas, Dept Bioengn, Richardson, TX 75080 USA
来源
ACS MACRO LETTERS | 2018年 / 7卷 / 06期
关键词
THIN-FILM TRANSISTORS; POLYMER SOLAR-CELLS; CONJUGATED POLYMERS; SMALL MOLECULES; CARRIER MOBILITY; HOLE MOBILITIES; SIDE-CHAINS; PERFORMANCE; SEMICONDUCTORS; AMBIPOLAR;
D O I
10.1021/acsmacrolett.8b00236
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Recent advancements in organic field effect transistors have switched chemists' focus from synthesizing libraries of organic semiconductors to a more targeted approach where chemical alterations are performed on known semi-conductors to further improve electronic properties. Among successful semi-conducting polymer candidates, copolymers based on diketopyrrolopyrrole-and thieno[3,2-b]thiophene [P(DPP-TT)] have been subjected to modifications on the diketopyrrolopyrrole unit by using flanking groups and side chain engineering. Thieno[3,2-b]thiophene moiety, however, has seen minimal modifications due to the limited number of modifying sites. Isoelectronic thieno[3,2-b]pyrrole could serve as an alternative since it is easily tunable via N-alkylation reactions. Therefore, for the first time, we report the replacement of the thieno[3,2-b]thiophene unit of P(DPP-TT) with thieno[3,2-b]pyrrole unit and its performance in p-channel field effect transistors. The copolymer exhibits linear characteristics to achieve a relatively high average hole mobility of 0.12 cm(2) V-1 s(-1) in bottom-gate/top-contact field effect transistors with threshold voltages as low as 0 V. These preliminary results highlight the potential of this thieno[3,2-b]pyrrole monomer for utilization in organic field effect transistors.
引用
收藏
页码:629 / 634
页数:11
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