MgB2 superconducting films for bolometer applications

被引：5

作者：

Monticone, E ^{[1
]}

Rajteri, M

Portesi, C

Bodoardo, S

Gonnelli, RS

机构：

[1] Ist Elettrotecnico Nazl Galileo Ferraris, I-10135 Turin, Italy

[2] Politecn Torino, Dipartimento Sci Mat & Ingn Chim, I-10129 Turin, Italy

[3] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期

关键词：

bolometer; deposition technique; magnesium diboride; micromachining; superconducting films;

D O I：

10.1109/TASC.2003.812211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin superconducting films of MgB2 has been prepared on r-plane sapphire and silicon nitride (SiN) by ex-situ technique and co-deposition of B and Mg at several substrate temperatures with the aim to fabricate superconducting bolometers. MgB2 films on r-plane sapphire, realized by annealing of a B film at 890 degreesC, show a T-c = 38 K and RRR = 2 while no transition has been observed for MgB2 films on SiN above 5 K treated in the same way. A reliable process of MgB2 growth on SiN with T-c between 27 K and 30 K and transition width of 0.5 K has been performed by co-deposition Mg and B and following annealing to 600 degreesC.

引用

页码：3242 / 3244

页数：3

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