V:YAG -: a new passive Q-switch for diode-pumped solid-state lasers

被引：158
|
作者：
Malyarevich, AM
Denisov, IA
Yumashev, KV
Mikhailov, VP
Conroy, RS
Sinclair, BD [1 ]
机构：
[1] Univ St Andrews, Sch Phys & Astron, JF Allen Res Labs, St Andrews KY16 9SS, Fife, Scotland
[2] Ctr Int Laser, Minsk 220027, BELARUS
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 1998年 / 67卷 / 05期
关键词：
D O I：
10.1007/s003400050544
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present the first use of V:YAG as a passive Q-switch for diode-pumped solid-state lasers. The ground- and excited-state absorption cross sections of V:YAG were measured to be sigma(gsa) = 3.0 x 10(-18) cm(2) and sigma(esa) = 1.4 x 10(-19) cm(2) at 1064 nm, and sigma(gsa) = 7.2 x 10(-18) cm(2) and sigma(esa) =7.4 x 10(-19) cm(2) at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO4 microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W.
引用
收藏
页码：555 / 558
页数：4
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