Ion irradiation effects on optical properties of silicon nitride films

被引：3
|
作者：
Matsunami, N. [1 ]
Shinde, N.
Tazawa, M.
Nakao, S.
Sataka, M.
Chimi, Y.
机构：
[1] Nagoya Univ, EcoTopia Sci Inst, Div Energy Sci, Nagoya, Aichi 4648603, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan
[3] Japan Atom Energy Agcy, Tokai, Ibaraki 3191195, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 19-20期
关键词：
silicon nitride film; ion irradiation; optical properties;
D O I：
10.1016/j.surfcoat.2006.01.091
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated effects on amorphous Si3N4 films induced by 100 keV Ne and N ions. Si3N4 films were deposited on SiO2-glass substrates by using reactive-RF-magnetron sputtering in N, gas at room temperature. It is found that the absorbance in the UV region increases with increasing Ne ion dose, and the absorbance in the visible and infrared regions remains unchanged under Ne ion irradiation. For N ion irradiation, the absorbance in the visible and infrared regions increases with the ion dose, while the absorbance in the UV region does not exhibit a simple dose-dependence. It also appears that the refractive index exhibits a slight decrease for Ne ion irradiation and a decrease in a littlie bit complicated way for 100 keV N ion irradiation. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：8322 / 8325
页数：4
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