Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors

被引：8
|
作者：
Lemberger, M.
Baunemann, A.
Bauer, A. J.
机构：
[1] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany
[2] Ruhr Univ Bochum, Chair Inorgan Chem 2, D-44801 Bochum, Germany
[3] Fraunhofer Inst Integrat Syst & Device Technol, D-91058 Erlangen, Germany
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 4-5期
关键词：
D O I：
10.1016/j.microrel.2007.01.032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, physical and electrical properties of TaN films used as metal electrodes in MOS structures are discussed. TaN films were deposited by MOCVD from commercial TBTDET and two novel mixed amido/imido/guanidinato and mixed amido/imido/hydrazido precursors. It will be shown that morphology (only films deposited from the guanidinato compound above 750 degrees C showed cubic TaN phase while all other films were amorphous) and O content (5 at.%,, and 25 at.% in case of guanidinato and in case of TBTDET precursor, respectively) do not necessary predetermine resistivity. Lowest resistivity (230 mu Omega em) was obtained for TBTDET. Evaluated values of metal work function are 4.4-4.6 eV (TBTDET) and 3.9 eV (guanidinato compound). Films deposited from the hydrazido compound reveal bad electrical properties (e.g., metal layers behave dielectric-like). (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：635 / 639
页数：5
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