Random lasing realized in n-ZnO/p-MgZnO core-shell nanowire heterostructures

被引:12
|
作者
Lu, Ying-Jie [1 ,2 ]
Shan, Chong-Xin [1 ]
Jiang, Ming-Ming [1 ]
Hu, Guang-Chong [1 ,2 ]
Zhang, Nan [1 ,2 ]
Wang, Shuang-Peng [1 ]
Lia, Bing-Hui [1 ]
Shen, De-Zhen [1 ]
机构
[1] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源
CRYSTENGCOMM | 2015年 / 17卷 / 21期
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING DEVICES; PUMPED RANDOM LASERS; NANOROD ARRAYS; EMISSION; DIODE; GROWTH; FILMS;
D O I
10.1039/c5ce00572h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Well-aligned ZnO nanowire arrays have been prepared, and p-MgZnO has been deposited onto the nanowires to form core-shell heterostructures. Transmission electron microscopy confirms the formation of n-ZnO/p-MgZnO core-shell nanowire heterostructures. Under injection of a continuous current, random lasing with a threshold current of around 15 mA has been observed from the heterostructures. The low threshold may be due to the relatively high crystalline quality of the ZnO nanowires as well as the carrier confinement in the heterostructures.
引用
收藏
页码:3917 / 3922
页数:6
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