Interface states and capacitance-voltage characteristics of n-SnO2:Ni/p-Si heterostructures under gas-adsorption conditions

被引：2
|
作者：
Vasil'ev, RB [1 ]
Gas'kov, AM [1 ]
Rumyantseva, MN [1 ]
Ryabova, LI [1 ]
Akimov, BA [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1365187
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The n-SnO2:Ni/p-Si heterostructures were synthesized with a mean size of 6-8 nm of crystallites in the tin dioxide layer. The capacitance-voltage characteristics of these structures were measured in dry air and under adsorption of NO2 and C2H5OH molecules. The variation of a reference-signal frequency within 0.5-20 kHz made it possible to separate out the contribution of heterointerface states to the structure capacitance. Adsorption of NO2 molecules was shown to reduce the density of the heterointerface states, while adsorption of ethanol molecules resulted in its increase. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：424 / 426
页数：3
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