Interfacing topological insulators and ferrimagnets: Bi2Te3and Fe3O4heterostructures grown by molecular beam epitaxy

被引：6

作者：

Pereira, V. M. ^{[1
]}

Wu, C. N. ^{[1
,2
]}

Knight, C. -A. ^{[1
,3
]}

Choa, A. ^{[1
,3
]}

Tjeng, L. H. ^{[1
]}

Altendorf, S. G. ^{[1
]}

机构：

[1] Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

来源：

APL MATERIALS | 2020年 / 8卷 / 07期

关键词：

Magnetite;

D O I：

10.1063/5.0010339

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here, we investigate heterostructures of Bi(2)Te(3)and Fe3O4. By growing two different types of heterostructures by molecular beam epitaxy, Fe(3)O(4)on Bi(2)Te(3)and Bi(2)Te(3)on Fe3O4, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi(2)Te(3)on Fe(3)O(4)to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.

引用

页数：10

共 50 条

[1] Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy
Plucinski, L.
Mussler, G.
Krumrain, J.
Herdt, A.
Suga, S.
Gruetzmacher, D.
Schneider, C. M.
APPLIED PHYSICS LETTERS, 2011, 98 (22)
[2] Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates
Liu, X.
Smith, D. J.
Fan, J.
Zhang, Y. -H.
Cao, H.
Chen, Y. P.
Leiner, J.
Kirby, B. J.
Dobrowolska, M.
Furdyna, J. K.
APPLIED PHYSICS LETTERS, 2011, 99 (17)
[3] P-N Junctions in Ultrathin Topological Insulator Sb2Te3/Bi2Te3 Heterostructures Grown by Molecular Beam Epitaxy
Lanius, Martin
Kampmeier, Joern
Weyrich, Christian
Kolling, Sebastian
Schall, Melissa
Schueffelgen, Peter
Neumann, Elmar
Luysberg, Martina
Mussler, Gregor
Koenraad, Paul M.
Schaepers, Thomas
Gruetzmacher, Detlev
CRYSTAL GROWTH & DESIGN, 2016, 16 (04) : 2057 - 2061
[4] Molecular beam epitaxy-grown Bi4Te3 nanowires
Wang, G.
Lok, S. K.
Wong, G. K. L.
Sou, I. K.
APPLIED PHYSICS LETTERS, 2009, 95 (26)
[5] Physicochemical analysis of Bi2Te3 - (Fe, Eu) - Bi2Te3 junctions grown by molecular beam epitaxy method
Balin, K.
Rapacz, R.
Weis, M.
Szade, J.
AIP ADVANCES, 2017, 7 (05):
[6] Spin-Orbit Torques and Magnetization Switching in (Bi,Sb)2Te3/Fe3GeTe2 Heterostructures Grown by Molecular Beam Epitaxy
Guillet, Thomas
Galceran, Regina
Sierra, Juan F.
Belarre, Francisco J.
Ballesteros, Belen
Costache, Marius V.
Dosenovic, Djordje
Okuno, Hanako
Marty, Alain
Jamet, Matthieu
Bonell, Frederic
Valenzuela, Sergio O.
NANO LETTERS, 2024, 24 (03) : 822 - 828
[7] Heterostructures of Graphene and Topological Insulators Bi2Se3, Bi2Te3, and Sb2Te3
Zollner, Klaus
Fabian, Jaroslav
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (01):
[8] Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys
Tung, Y.
Chiang, Y. F.
Chong, C. W.
Deng, Z. X.
Chen, Y. C.
Huang, J. C. A.
Cheng, C. -M.
Pi, T. -W.
Tsuei, K. -D.
Li, Z.
Qiu, H.
JOURNAL OF APPLIED PHYSICS, 2016, 119 (05)
[9] Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films
Kampmeier, Joern
Borisova, Svetlana
Plucinski, Lukasz
Luysberg, Martina
Mussler, Gregor
Gruetzmacher, Detlev
CRYSTAL GROWTH & DESIGN, 2015, 15 (01) : 390 - 394
[10] Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys
Chong, C.W. (cheongwei2000@yahoo.com), 1600, American Institute of Physics Inc. (119):

← 1 2 3 4 5 →