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- [8] TEMPERATURE AND PRESSURE DEPENDENCES OF IONIZATION-ENERGY OF FLUCTUATION LEVELS IN INSB1-XBIX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1302 - 1303
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- [10] Band gap variation in InSb1-xBix (x=0, 0.04, 0.05) Thin Films 3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019), 2020, 2220