Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductors

被引：0

作者：

Andrearczyk, T ^{[1
]}

Jaroszynski, J ^{[1
]}

Sawicki, M ^{[1
]}

Van Khoi, L ^{[1
]}

Dietl, T ^{[1
]}

Ferrand, D ^{[1
]}

Bourgognon, C ^{[1
]}

Cibert, J ^{[1
]}

Tatarenko, S ^{[1
]}

Fukumura, T ^{[1
]}

Jin, ZW ^{[1
]}

Koinuma, H ^{[1
]}

Kawasaki, M ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02688 Warsaw, Poland

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of magnetization, magnetoresistance and anomalous Hall effect indicate the ferromagnetic transition induced by the holes in doped p-Zn1-xMnxTe. The experimental findings can be described in the framework of the mean-field model of the carrier induced ferromagnetism. The same model predicts that for n-type Zn1-xMnxO:Al the temperature of ferromagnetic ordering is well below I K. Indeed, below 150 mK we observe hysteresis of magnetoresistance which could be a manifestation of carrier induced ferromagnetism.

引用

页码：234 / 235

页数：2

共 50 条

[1] Quantum Structures of II-VI Diluted Magnetic Semiconductors
Cibert, J.
Besombes, L.
Ferrand, D.
Mariette, H.
SPINTRONICS, 2008, 82 : 287 - +
[2] Magneto-optics of II-VI diluted magnetic semiconductors
Ramdas, AK
Alawadhi, H
CURRENT SCIENCE, 1998, 75 (11): : 1216 - 1221
[3] ELECTRONIC AND MAGNETIC-PROPERTIES OF II-VI DILUTED MAGNETIC SEMICONDUCTORS
HASS, KC
EHRENREICH, H
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 8 - 14
[4] THE MAGNETIC-PROPERTIES OF II-VI GROUP FE-TYPE DILUTED MAGNETIC SEMICONDUCTORS
SWAGTEN, HJM
TWARDOWSKI, A
ARNOUTS, FA
DEJONGE, WJM
DEMIANIUK, M
JOURNAL DE PHYSIQUE, 1988, 49 (C-8): : 873 - 874
[5] Improved contact resistance to n-type wide gap II-VI semiconductors
Lazzarino, M
Ozzello, T
Bratina, G
Vanzetti, L
Paggel, JJ
Sorba, L
Franciosi, A
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 718 - 722
[6] DX-like centers in II-VI diluted magnetic semiconductors
Wojtowicz, T.
Karczewski, G.
Semaltianos, N.G.
Kolesnik, S.
Miotkowski, I.
Dobrowolska, M.
Furdyna, J.K.
Materials Science Forum, 1994, 143-4 (pt 2) : 1203 - 1208
[7] LATTICE-DYNAMICS OF II-VI BASED DILUTED MAGNETIC SEMICONDUCTORS
TALWAR, DN
COLEMAN, AC
AMIRTHARAJ, PM
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4332 - 4334
[8] Exciton dynamics in quantum nanostructures of II-VI diluted magnetic semiconductors
Oka, Y
Takahashi, N
Takabayashi, K
Shirado, E
Souma, I
Pittini, R
Shen, JX
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2000, 221 (01): : 495 - 498
[9] Applications of II-VI diluted magnetic semiconductors for magneto-electronics
Ferrand, D
Wasiela, A
Tatarenko, S
Cibert, J
Richter, G
Grabs, P
Schmidt, G
Molenkamp, LW
Dietl, T
SOLID STATE COMMUNICATIONS, 2001, 119 (4-5) : 237 - 244
[10] Magneto-optical properties in hybrid nanostructures of II-VI diluted magnetic semiconductors with perpendicular ferromagnetic films
Sakuma, M
Hyomi, K
Souma, I
Murayama, A
Oka, Y
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (04): : 902 - 905

← 1 2 3 4 5 →