Soluble Organic Semiconductor Precursor with Specific Phase Separation for High-Performance Printed Organic Transistors

被引：41

作者：

Kimura, Yu ^{[1
]}

Nagase, Takashi ^{[1
,2
]}

Kobayashi, Takashi ^{[1
,2
]}

Hamaguchi, Azusa ^{[3
]}

Ikeda, Yoshinori ^{[3
]}

Shiro, Takashi ^{[3
]}

Takimiya, Kazuo ^{[4
,5
]}

Naito, Hiroyoshi ^{[1
,2
]}

机构：

[1] Osaka Prefecture Univ, Dept Phys & Elect, Naka Ku, Sakai, Osaka 5998531, Japan

[2] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Naka Ku, Sakai, Osaka 5998531, Japan

[3] Teijin Ltd, Elect Mat Dev Project, Tokyo 1918512, Japan

[4] Hiroshima Univ, Dept Appl Chem, Hiroshima 7398527, Japan

[5] RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 04期

基金：

日本学术振兴会;

关键词：

environmental durability; organic thin-film transistors; soluble dinaphtho[2; 3-b:2; 3?-f]thieno[3; 2-b]thiophene precursors; solution-processable organic semiconductors; vertical phase separation; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; PENTACENE PRECURSOR; STABILITY; MOBILITY;

D O I：

10.1002/adma.201404052

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A soluble precursor of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) is developed for high-performance printed organic thin-film transistors (OTFTs). The DNTT precursor enables excellent thin-film formation and can induce specific phase separations when blended with inert polymers. The DNTT OTFTs processed from the precursor/polymer blend exhibit field-effect mobilities of up to 1.1 cm2 V-1 s-1 and excellent durability against air exposure and thermal stress. (Figure Presented). © 2014 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：727 / 732

页数：6

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