THz Oscillators Using Resonant Tunneling Diodes at Room Temperature

被引：0

作者：

Asada, M. ^{[1
]}

Suzuki, S. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年

关键词：

SUB-TERAHERTZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature THz oscillators using resonant tunneling diodes are shown. Structures for short transit time are fabricated toward 1 THz fundamental oscillation. Oscillators with offset slot antenna and array configuration are demonstrated for high power. Bias-dependent frequency, spectral linewidth, and direct modulation are also reported.

引用

页数：3

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