Growth of GaMnAs under near-stoichiometric conditions

We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. A Curie temperature as high as 95 K was achieved for the Ga0.96Mn0.04As samples grown at 240 degrees C and a V/III ratio of about 1.5. The lattice parameter of Ga0.96Mn0.04As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of the V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed. (c) 2005 American Institute of Physics.