Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using MOVPE

被引：1

作者：

Dixit, V. K. ^{[1
]}

Singh, S. D. ^{[1
]}

Sharma, T. K. ^{[1
]}

Ganguli, Tapas ^{[1
]}

Jangir, Ravindra ^{[1
]}

Pal, Suparna ^{[1
]}

Khattak, B. Q. ^{[1
]}

Srivastava, A. K. ^{[1
]}

Srivastava, Himanshu ^{[1
]}

Oak, S. M. ^{[1
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Indore 452013, MP, India

来源：

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年

关键词：

ECV; infrared; inter-subband; QWIP;

D O I：

10.1109/IWPSD.2007.4472517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector structures were grown using metal organic vapour phase epitaxy (MOVPE). The crystalline quality, optical properties, carrier doping profile and intersubband absorption were studied in detail. These studies were carried out with overall motivation to understand whether p-QWIPs can have comparable or better performance than n-QWIPs considering normal incidence and device processing advantages.

引用

页码：355 / 358

页数：4

共 50 条

[1] GAAS/ALGAAS QUANTUM WELL STRUCTURES GROWN BY MOVPE
LEITCH, AWR
VERMAAK, JS
EHLERS, HL
RAUBENHEIMER, D
SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (08) : 708 - 710
[2] Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
Sengupta, DK
Weisman, MB
Feng, M
Chuang, SL
Chang, YC
Cooper, L
Adesida, I
Bloom, I
Hsieh, KC
Fang, W
Malin, JI
Curtis, AP
Horton, T
Stillman, GE
Gunapala, SD
Bandara, SV
Pool, F
Liu, JK
McKelvey, M
Luong, E
Hong, W
Mumolo, J
Liu, HC
Wang, WI
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (07) : 858 - 865
[3] Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
D. K. Sengupta
M. B. Weisman
M. Feng
S. L. Chuang
Y. C. Chang
L. Cooper
I. Adesida
I. Bloom
K. C. Hsieh
W. Fang
J. I. Malin
A. P. Curtis
T. Horton
G. E. Stillman
S. D. Gunapala
S. V. Bandara
F. Pool
J. K. Liu
M. McKelvey
E. Luong
W. Hong
J. Mumolo
H. C. Liu
W. I. Wang
Journal of Electronic Materials, 1998, 27 : 858 - 865
[4] The confinement profile of as-grown movpe AlGaAs/GaAs quantum well structures
Choy, WCH
Hughes, PJ
Weiss, BL
INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 425 - 430
[5] Modeling on GaAs/AlGaAs quantum well infrared photodetector
Lu, W
Li, N
Shen, SC
Fu, Y
Willander, M
2000 25TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES CONFERENCE DIGEST, 2000, : 37 - 39
[6] Quantum well infrared photodetector array on a basis of GaAs/AlGaAs MQW, grown by MOCVD
Avetisjan, GH
Kulikov, VB
Kotov, VP
Erkin, AK
Zalevsky, ID
FIFTH CONFERENCE ON CHARGE-COUPLED DEVICES AND CCD SYSTEMS, 1996, 2790 : 30 - 37
[7] Noise gain and detectivity of n-type GaAs/AlAs/AlGaAs quantum well infrared photodetectors
Schönbein, C
Schneider, H
Rehm, R
Walther, M
APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1251 - 1253
[8] Asymmetry in the characteristic of GaAs/AlGaAs quantum well infrared photodetector
Li, Na
Li, Ning
Lu, Wei
Yuan, Xian-Zhang
Li, Zhi-Feng
Dou, Hong-Fei
Liu, Jing-Jiao
Shen, Xue-Chu
Jin, Li
Li, Hong-Wei
Zhou, Jun-Ming
Huang, Yi
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2001, 20 (06): : 411 - 414
[9] GaAs/AlGaAs quantum well infrared photodetector with low noise
DENG Jun~
OptoelectronicsLetters, 2005, (01) : 37 - 39
[10] Asymmetry in the characteristic of GaAs/AlGaAs quantum well infrared photodetector
Li, N
Li, N
Lu, W
Yuan, XZ
Li, ZF
Dou, HF
Liu, JJ
Shen, XC
Jin, L
Li, HW
Zhou, JM
Huang, Y
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2001, 20 (06) : 411 - 414

← 1 2 3 4 5 →