Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using MOVPE

被引:1
|
作者
Dixit, V. K. [1 ]
Singh, S. D. [1 ]
Sharma, T. K. [1 ]
Ganguli, Tapas [1 ]
Jangir, Ravindra [1 ]
Pal, Suparna [1 ]
Khattak, B. Q. [1 ]
Srivastava, A. K. [1 ]
Srivastava, Himanshu [1 ]
Oak, S. M. [1 ]
机构
[1] Raja Ramanna Ctr Adv Technol, Indore 452013, MP, India
来源
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词
ECV; infrared; inter-subband; QWIP;
D O I
10.1109/IWPSD.2007.4472517
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector structures were grown using metal organic vapour phase epitaxy (MOVPE). The crystalline quality, optical properties, carrier doping profile and intersubband absorption were studied in detail. These studies were carried out with overall motivation to understand whether p-QWIPs can have comparable or better performance than n-QWIPs considering normal incidence and device processing advantages.
引用
收藏
页码:355 / 358
页数:4
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