Effect of phosphine plasma on suppression of plasma-induced defects in InGaAs

被引：0

作者：

Sugino, T ^{[1
]}

Miyazaki, T ^{[1
]}

Matsuda, K ^{[1
]}

Shirafuji, J ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 565, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron traps at and near the surface of InGaAs treated with Ar plasma are investigated by isothermal capacitance transient spectroscopy measurements. Two electron traps are detected and designated as E1 and E2. The E1 and E2 traps are located at 0.35 eV and 0.48 eV below the conduction band edge, respectively. In the case when InGaAs is treated with PH3-added Ar plasma, a significant reduction in the densities of both E1 and E2 traps occurs in comparison with those of Ar-plasma-treated InGaAs. It is found that phosphorus atoms are effective in suppressing generation of electron traps in InGaAs.

引用

页码：171 / 174

页数：4

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