Ion beam synthesis and characterization of yttrium silicide in Si(111)

被引：1
|
作者：
Ayache, R. [1 ]
Bouabellou, A. [1 ]
Eichhorn, F. [1 ]
Richter, E. [1 ]
Muecklich, A. [1 ]
机构：
[1] Inst Ion Beam Phys & Mat Res, Forschungszentrum Rossendorf, D-01314 Dresden, Germany
来源：
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2007年 / 27卷 / 5-8期
关键词：
yttriurn silicide; RBS; XRD pole figure; XTEM;
D O I：
10.1016/j.msec.2006.07.030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin YSi2-x layers are formed by 195 keV Y ion implantation in Si(111) substrates to a dose of 2 x 10(17) Y+/cm(2) at 500 degrees C followed by annealing in nitrogen atmosphere at different temperatures for I h. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is accomplished by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the YSi2-x layers grown on the Si has the epitaxial relationship of YSi2-x (0 0 0 1)//Si(111) and YSi2-x [11- 20]//Si [110]. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：1479 / 1481
页数：3
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