Reliability of Solid-State Drives Based on NAND Flash Memory

被引:75
|
作者
Mielke, Neal R. [1 ]
Frickey, Roberte. [2 ]
Kalastirsky, Ivan [2 ]
Quan, Minyan [2 ]
Ustinov, Dmitry [2 ]
Vasudevan, Venkatesh J. [2 ]
机构
[1] Intel Corp, Santa Clara, CA 95054 USA
[2] Intel Corp, NVM Solut Grp, Folsom, CA 95630 USA
关键词
Data retention; endurance; JEDEC; NAND flash memory; reliability; solid-state drives (SSDs); INDUCED SOFT ERRORS; PART I; MODEL;
D O I
10.1109/JPROC.2017.2725738
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews the reliability of solid-state drives (SSDs) based on NAND Flash memory from the perspectives of failure mechanisms, design mitigations, qualification methods, and field failure rates. NAND reliability is dominated by gradual memory-cell degradation in late life and defects such as interconnect shorts earlier in life. Design mitigations exist for these mechanisms. Qualification methods standardized in JEDEC JESD218 are designed to evaluate the mechanisms and mitigations, over a full drive lifetime, in the laboratory. Full-lifetime qualification provides confidence in the long-term reliability of SSDs that cannot be achieved by the early-life qualifications performed on hard disk drives. If NAND mechanisms are sufficiently suppressed, field reliability will be dominated by non-NAND mechanisms such as firmware bugs, power-loss events, radiation-induced soft errors, and failures in non-NAND components. A wide range of design validation and qualification tests are necessary to evaluate these non-NAND mechanisms. Published field reliability statistics indicate that SSDs are more reliable on average than HDDs, but they are not immune to failure, and there is wide variation among models. The NAND and non-NAND mechanisms are illustrated through new case studies of SSD internal qualification and field reliability data.
引用
收藏
页码:1725 / 1750
页数:26
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