Hydrothermally grown PZT thick films on Ba(Zr,Ti)O3 substrates

被引：0
|
作者：
Choi, K [1 ]
Choi, J
Choi, ES
Chung, SY
Lee, HY
机构：
[1] Korea Inst Ceram Eng & Tech, Seoul 153801, South Korea
[2] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
[3] Sunmoon Univ, Div Mat & Chem Eng, Asan 336840, South Korea
来源：
INTEGRATED FERROELECTRICS | 2005年 / 69卷
关键词：
hydrothermal synthesis; Ba(Ti; Zr)O-3; crystal; single crystal growth; PZT heteroepitaxial growth;
D O I：
10.1080/10584580590897308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dense and thick lead zirconate titanate (PZT) epitaxial film was synthesized on a Ba(Ti-0.9,Zr-0.1)O-3 (BZT) substrate via hydrothermal treatment. The PZT films showed an excellent in-plane alignment with the BZT substrate, and also the crystallinity of the films was strongly dependant on the hydrothermal synthesis condition. An epitaxial PZT film as thick as 4.6 microns could be obtained after three-time repetition of the hydrothermal treatment.
引用
收藏
页码：73 / 81
页数：9
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