Persistent photoconductivity in InGaN/GaN multiquantum wells

被引：33
|
作者：
Yang, HC [1 ]
Lin, TY [1 ]
Chen, YF [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 03期
关键词：
D O I：
10.1063/1.1340000
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations. (C) 2001 American Institute of Physics.
引用
收藏
页码：338 / 340
页数：3
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