High breakdown voltage GaAs schottky diode for a high efficiency rectifier in microwave power transmission systems

被引：0
|
作者：
Tanaka, Toshiyuki [1 ]
Nakamura, Marika [1 ]
Yamaguchi, Yutaro [1 ]
Tsuru, Masaomi [1 ]
Aihara, Yasuki [1 ]
Yamamoto, Atsushi [1 ]
Homma, Yukihiro [1 ]
Taniguchi, Eiji [1 ]
机构：
[1] Mitsubishi Electr Corp, 8-1-1 Tsukaguchi Hommachi, Amagasaki, Hyogo 6618661, Japan
来源：
2015 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2015年
关键词：
Microwave Wireless Power Transmission; Space solar Power Systems; Rectenna; 5.8; GHz-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microwave wireless power transmission systems require a high RF-DC conversion efficiency rectifier at input power such as 1 W. To meet this requirement, a rectifying device with high breakdown voltage is developed. This paper describes a fabricated high breakdown voltage GaAs Schottky Barrier Diode (SBD) as the rectifying device. The fabricated GaAs SBD at low doping concentration of 2.6x10(16) cm(-3) achieves breakdown voltage of 23.5 V and the conversion efficiency of 77.2% at input power of 27 dBm under condition without harmonic tuning technique which is agreed with simulation result. When harmonic tuning technique is adopted, a 5.8 GHz-band single shunt rectifier with the fabricated GaAs SBD achieves the conversion efficiency of 81.7% at input power of 27 dBm in simulation. This conversion efficiency is the best performance at around 1 W input power and C-band to our knowledge.
引用
收藏
页码：199 / 201
页数：3
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