High deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and "Hot-Wire" CVD techniques

The cost of amorphous silicon solar panels are dictated by the deposition rate, the utilization rate of the silane gas and stability issues. In this context, we present data of amorphous silicon materials and solar cells using pulsed plasma PECVD (plasma enhanced chemical vapor deposition) technique with the i-layer fabricated with high deposition rates. "Hot-Wire" CVD deposition technique has attracted a considerable amount of interest because of the ability to produce amorphous silicon at high deposition rates and with low hydrogen concentration of H which could minimize the stability phenomena. Further, under suitable conditions, low-temperature polycrystalline silicon can be produced. We present data of high deposition rates of polycrystalline Si (similar to 10 A/s) and discuss its potential usefulness in a hybrid tandem (combination of amorphous and polycrystalline) junctions. (C) 1998 Elsevier Science B.V. All rights reserved.