OPTICAL PROPERTIES OF BULK GALLIUM OXIDE GROWN FROM THE MELT

被引：4

作者：

Mynbaeva, M. G. ^{[1
,2
]}

Shirshnev, P. S. ^{[1
]}

Kremleva, A., V ^{[1
]}

Smirnov, A. N. ^{[2
]}

Ivanova, E., V ^{[2
]}

Zamoryanskaya, M., V ^{[2
]}

Nikitina, I. P. ^{[2
]}

Lavrent'ev, A. A. ^{[2
]}

Mynbaev, K. D. ^{[1
,2
]}

Odnoblyudov, M. A. ^{[1
]}

Bauman, D. A. ^{[1
]}

Lipsanen, H. ^{[1
]}

Nikolaev, V., I ^{[1
,2
]}

Bougrov, V. E. ^{[1
]}

Romanov, A. E. ^{[1
,2
]}

机构：

[1] ITMO Univ, Kronverkskiy 49, St Petersburg 197101, Russia

[2] Ioffe Inst, Polytech Skaya 26, St Petersburg 194021, Russia

来源：

REVIEWS ON ADVANCED MATERIALS SCIENCE | 2018年 / 57卷 / 01期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; FIELD;

D O I：

10.1515/rams-2018-0051

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Results of the studies of the properties of single-crystalline bulk beta-Ga2O3 grown from the melt are presented. High chemical purity and phase uniformity of the grown material are demonstrated. Raman spectroscopy studies confirmed low energies of optical phonons in beta-Ga2O3, which makes it a promising material for laser optics applications.

引用

页码：97 / 103

页数：7

共 50 条

[1] Crystal structure and optical properties of bulk GaN crystals grown from a melt at reduced pressure
Sukhoveyev, V
Ivantsov, V
Zubrilov, A
Nikolaev, V
Nikitina, I
Bougrov, V
Tsvetkov, D
Dmitriev, V
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1331 - 1334
[2] Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
Zubrilov, AS
Melnik, YV
Nikolaev, AE
Jacobson, MA
Nelson, DK
Dmitriev, VA
SEMICONDUCTORS, 1999, 33 (10) : 1067 - 1071
[3] Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
A. S. Zubrilov
Yu. V. Melnik
A. E. Nikolaev
M. A. Jacobson
D. K. Nelson
V. A. Dmitriev
Semiconductors, 1999, 33 : 1067 - 1071
[4] Effect of Anisotropy on Thermoelastic Stresses in Cylindrical Gallium Oxide Crystals Grown from a Melt
Bakholdin, S. I.
Galaktionov, E. V.
Krymov, V. M.
TECHNICAL PHYSICS, 2024, 69 (05) : 1098 - 1101
[5] Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt
Skromme, BJ
Palle, KC
Poweleit, CD
Yamane, H
Aoki, M
DiSalvo, FJ
APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3765 - 3767
[6] Optical properties of lithium gallium oxide
Tumenas, S.
Mackonis, P.
Nedzinskas, R.
Trinkler, L.
Berzina, B.
Korsaks, V.
Chang, L.
Chou, M. M. C.
APPLIED SURFACE SCIENCE, 2017, 421 : 837 - 842
[7] Volume Gallium Oxide Crystals Grown from Melt by the Czochralski Method in an Oxygen-Containing Atmosphere
Zakgeim, D. A.
Panov, D. I.
Spiridonov, V. A.
Kremleva, A. V.
Smirnov, A. M.
Bauman, D. A.
Romanov, A. E.
Odnoblyudov, M. A.
Bougrov, V. E.
TECHNICAL PHYSICS LETTERS, 2020, 46 (11) : 1144 - 1146
[8] Volume Gallium Oxide Crystals Grown from Melt by the Czochralski Method in an Oxygen-Containing Atmosphere
D. A. Zakgeim
D. I. Panov
V. A. Spiridonov
A. V. Kremleva
A. M. Smirnov
D. A. Bauman
A. E. Romanov
M. A. Odnoblyudov
V. E. Bougrov
Technical Physics Letters, 2020, 46 : 1144 - 1146
[9] Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt
Kunitsyn, AE
Chaldyshev, VV
Milvidskaya, AG
Milvidskii, MG
SEMICONDUCTORS, 1997, 31 (08) : 806 - 808
[10] Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt
A. E. Kunitsyn
V. V. Chaldyshev
A. G. Mil’vidskaya
M. G. Mil’vidskii
Semiconductors, 1997, 31 : 806 - 808

← 1 2 3 4 5 →