High Device Yield Carbon Nanotube NFETs for High-Performance Logic Applications

被引：0

作者：

Shahrjerdi, Davood ^{[1
]}

Franklin, Aaron D. ^{[1
]}

Oida, Satoshi ^{[1
]}

Tulevski, George S. ^{[1
]}

Han, Shu-Jen ^{[1
]}

Hannon, James B. ^{[1
]}

Haensch, Wilfried ^{[1
]}

机构：

[1] IBM Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.

引用

页数：4

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