A co-crystallization strategy toward high-performance n-type organic semiconductors through charge transport switching from p-type planar azaacene derivatives

被引:3
|
作者
Wang, Zongrui [1 ,2 ]
Li, Renping [3 ]
Zhao, Kexiang [4 ]
Yu, Fei [2 ]
Zhao, Jianfeng [3 ]
Zhen, Yonggang [1 ]
Zhang, Qichun [5 ,6 ]
机构
[1] Beijing Univ Chem Technol, Sch Mat Sci & Engn, North Third Ring Rd 15, Beijing 100029, Peoples R China
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[3] Nanjing Tech Univ, Inst Adv Mat IAM, Nanjing 210000, Peoples R China
[4] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[5] City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China
[6] City Univ Hongkong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; ACTIVE-MATRIX DISPLAYS; CRYSTAL-STRUCTURE; ELECTRON; MOBILITY; POLYMER;
D O I
10.1039/d1tc04610a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we demonstrated that the co-crystallization strategy has offered an efficient and promising alternative route to achieve high-performance n-type semiconductors through charge-transport switching from pristine p-type systems. By using a simple "green synthesis" process through molecular "doping" with F(4)TCNQ into a p-type planar azaacene derivative TMIQ (0.27 cm(2) V-1 s(-1)) host, charge transport characteristic switching occurs with a high electron mobility of 0.12 cm(2) V-1 s(-1) under atmospheric conditions obtained for the D-A complex TMF4TQ (cocrystal). The reasons for such switching lie in the ingenious energy level and molecular packing arrangement tailoring. Specifically, the insertion of F(4)TCNQ molecules has led to packing transformation from herringbone stacking (TMIQ) to a dense 2D brick arrangement and the low-lying LUMO levels (-4.55 eV) aligned to gold electrodes, thereby facilitating efficient electron injection and transport, and ensuring the air-stable nature, which is further confirmed using theoretical calculations. We believe that our work would provide new insights into high-performance air-stable n-type organic semiconductors exploration.
引用
收藏
页码:2757 / 2762
页数:6
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