Nanostructured topological state in bismuth nanotube arrays: inverting bonding-antibonding levels of molecular orbitals
被引:7
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作者:
Jin, Kyung-Hwan
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机构:
Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USAUniv Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
Jin, Kyung-Hwan
[1
]
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机构:
Jhi, Seung-Hoon
[2
]
Liu, Feng
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机构:
Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R ChinaUniv Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
Liu, Feng
[1
,3
]
机构:
[1] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
We demonstrate a new class of nanostructured topological materials that exhibit a topological quantum phase arising from nanoscale structural motifs. Based on first-principles calculations, we show that an array of bismuth nanotubes (Bi-NTs), a superlattice of Bi-NTs with periodicity in the order of tube diameter, behaves as a nanostructured two-dimensional (2D) quantum spin Hall (QSH) insulator, as confirmed from the calculated band topology and 1D helical edge states. The underpinning mechanism of the QSH phase in the Bi-NT array is revealed to be inversion of bonding-antibonding levels of molecular orbitals of constituent nanostructural elements in place of atomic-orbital band inversion in conventional QSH insulators. The quantized edge conductance of the QSH phase in a Bi-NT array can be more easily isolated from bulk contributions and their properties can be highly tuned by tube size, representing distinctive advantages of nanostructured topological phases. Our finding opens a new avenue for topological materials by extending topological phases into nanomaterials with molecular-orbital-band inversion.