Strong current-direction dependence of anisotropic magnetoresistance in single crystalline Fe/GaAs (110) films

被引:9
|
作者
Zeng, F. L. [1 ]
Zhou, C. [1 ]
Jia, M. W. [1 ]
Shi, D. [1 ]
Huo, Y. [1 ]
Zhang, W. [2 ]
Wu, Y. Z. [1 ,3 ]
机构
[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Oakland Univ, Dept Phys, Rochester, MI 48309 USA
[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
Anisotropic magnetoresistance; Planar Hall effect; Magnetic thin film; ROOM-TEMPERATURE;
D O I
10.1016/j.jmmm.2019.166204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The longitudinal and transverse resistivities of single crystalline Fe(1 1 0) film are both experimentally studied as functions of the magnetization orientation and the current orientation with respect to the crystalline axes. Unusual dependences and symmetries are revealed but cannot be described well by established conventional models. Furthermore, the anisotropic magnetoresistance ratios differ by more than one order of magnitude for currents along different crystalline directions. Analytical expressions for the resistivities are derived by using a phenomenological model based on a series expansion of the resistivity tensor with respect to the direction cosines of the magnetization up to the fourth order. The experimental data can be fitted well by these expressions, and the resistivity coefficients obtained from the fitting are consistent with the symmetries of the current-direction dependence measurements. The resistivity coefficients increase with temperature due to electron-phonon scattering. Our studies suggest that the spin-dependent transport properties could exhibit strong magneto-crystalline effect, which paves a new way for designing future spintronics devices by taking advantage of the material crystallinity.
引用
收藏
页数:7
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