A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy

被引：0

作者：

Schiz, J ^{[1
]}

Bonar, JM ^{[1
]}

Ashburn, P ^{[1
]}

机构：

[1] Univ Southampton, Dept Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

来源：

EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 1997年

关键词：

D O I：

10.1109/EDMO.1997.668612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy is proposed. It is shown that damage in the silicon substrate induced by reactive ion etching can be effectively removed and that this allows the growth of high quality selective and non-selective epitaxy. It is also shown that selective epitaxy followed by non-selective epitaxy can be performed in one process step while controlling the base thickness and doping.

引用

页码：255 / 260

页数：6

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