Low threshold current 1540 nm wavelength GaInAsP/InP quantum-wire distributed-feedback lasers

被引：0

作者：

Yagi, H ^{[1
]}

Miura, K ^{[1
]}

Plumwongrot, D ^{[1
]}

Nishimoto, Y ^{[1
]}

Ohira, K ^{[1
]}

Maruyama, T ^{[1
]}

Arai, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

2005 International Conference on Indium Phosphide and Related Materials | 2005年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

1540 nm wavelength GaInAsP/InP quantum-wire (24 nm wide) distributed feedback lasers were realized by dry etching and regrowth method. A threshold current as low as 2.7 mA, a differential quantum efficiency of 19 %/facet and an SMSR of 51 dB (@ 2I(th)) were attained under RT-CW condition for the stripe width of 3.0 mu m and the cavity length of 330 mu m.

引用

页码：526 / 529

页数：4

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