Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC

被引：52
|
作者：
Treu, M
Rupp, R
Kapels, H
Bartsch, W
机构：
[1] Infineon Technol AG, AI IP DD SIC, DE-91050 Erlangen, Germany
[2] SICED GmbH, DE-91050 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
field emission; Schottky diodes; temperature dependent C-V characteristics;
D O I：
10.4028/www.scientific.net/MSF.353-356.679
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study Ta, W, Ti, and Ni Schottky diodes are characterized under forward and reverse bias for temperatures between +21 degreesC and +200 degreesC. Additionally the Ti Diodes were characterized for temperatures between -168 degreesC and +21 degreesC. It will be shown that the reverse current is dominated by thermionic field emission for all metals, if the junction temperature is in the typical device operating temperature Furthermore we will show that nan-ideal forward characteristics not necessarily have a negative in on the reverse characteristics of the diodes. This will be explained by a model proposed by Tung, which considers the pinch off of the defects by the defect free areas around the defect.
引用
收藏
页码：679 / 682
页数：4
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