Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions

被引：12
|
作者：
Seino, K [1 ]
Schmidt, WG [1 ]
机构：
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
来源：
SURFACE SCIENCE | 2004年 / 548卷 / 1-3期
关键词：
reflection spectroscopy; density functional calculations; semiconducting surfaces; silicon;
D O I：
10.1016/j.susc.2003.11.002
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Reflectance anisotropy spectra (RAS) for energetically favored models of uracil covered Si(0 0 1) surfaces have been calculated within the independent particle approximation. While for low coverages mainly an attenuation of the features typical for the clean surface is found, the calculations predict the appearance of new peaks for higher coverages, suggesting the usage of RAS for the analysis of organic/inorganic interfaces. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：183 / 186
页数：4
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