An in-situ study of structure and magnetic properties of Fe films on the sulphur passivated Ge(100) surface at 150°C

被引:16
|
作者
Ma, P
Anderson, GW
Norton, PR [1 ]
机构
[1] Univ Western Ontario, Dept Chem, London, ON N6A 3K7, Canada
[2] Univ Western Ontario, Dept Phys, London, ON N6A 3K7, Canada
[3] Read Write, Fremont, CA 94539 USA
基金
加拿大自然科学与工程研究理事会;
关键词
metal-semiconductor magnetic thin film structures; iron; germanium; magnetic measurements; molecular beam epitaxy;
D O I
10.1016/S0039-6028(98)00777-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ultra-thin Fe films have been grown on the sulphur passivated Ge(100) surface at 150 degrees C. The growth, structure and the magnetic properties of the thin films were studied with LEED, AES, angle resolved AES and in-situ magnetooptical Kerr effect measurements. For the first five monolayers of Fe, no long-range order was observed. However, angle resolved AES data suggest that local order occurs with a small fraction of the Fe atoms adsorbed on bcc sites. For thicker Fe films, the growth becomes ordered. A comparison of the present study and with a previous study of the growth of Fe on sputter cleaned Ge(100) (2 x 1) surface, shows that sulphur passivation effectively prevents Fe-Ge intermixing. During the Fe deposition process, most of the sulphur atoms migrate to the growing surface, thus acting as surfactants. The presence of sulphur at the surface also affects the growth and magnetic properties of the thin films. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:134 / 141
页数:8
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