Frequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance

被引：0

作者：

Osadchuk, Oleksandr V. ^{[1
]}

Osadchuk, Iaroslav O. ^{[1
]}

Suleimenov, Batyrbek ^{[2
]}

Zyska, Tomasz ^{[3
]}

Arman, Abenov ^{[4
]}

Tleshova, Akmaral ^{[5
]}

Gradz, Zaklin ^{[5
]}

机构：

[1] Vinnytsia Natl Tech Univ, Khmelnytske Hwy 95, UA-21000 Vinnytsia, Ukraine

[2] Kazakh Natl Res Tech Univ, 22 Satpayev Str, Alma Ata, Kazakhstan

[3] Lublin Univ Technol, 38a Nadbystrzycka Str, PL-20618 Lublin, Poland

[4] Joint Stock Co Alatau Zharyk Co Reg ENERGY TRANSM, Alma Ata, Kazakhstan

[5] al Farabi Kazakh Natl Univ, 71 al Farabi Str, Alma Ata, Kazakhstan

来源：

PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH ENERGY PHYSICS EXPERIMENTS 2017 | 2017年 / 10445卷

关键词：

frequency pressure transducer; MEMS capacitor; negative resistance;

D O I：

10.1117/12.2280958

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenso sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa.

引用

页数：9

共 38 条

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