Low temperature growth of epitaxial La0.5Sr0.5CoO3 films on (100)SrTiO3 by pulsed laser deposition

被引：19
|
作者：
Wong, KH [1 ]
Wu, WB
Chan, PW
Cheung, JT
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong
[2] Hong Kong Polytech Univ, Ctr Mat Res, Kowloon, Hong Kong
[3] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA
[4] Univ Sci & Technol China, Struct Res Lab, Acad Sinica, Hefei 230026, Peoples R China
来源：
THIN SOLID FILMS | 1998年 / 312卷 / 1-2期
关键词：
low temperature; epitaxial; pulsed laser deposition;
D O I：
10.1016/S0040-6090(97)00224-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Perovskite conductive La0.5Sr0.5CoO3 (LSCO) thin films were grown in situ on (100)SrTiO3 by pulsed laser deposition at 400, 450 and 500 degrees C. Heterostructures of Pb(Zr0.54Ti0.46)O-3/LSCO and YBa2Cu3O7-x/LSCO were also prepared in situ on the same substrates, where the LSCO layers were deposited at 500 degrees C. All the films were characterized structurally by X-ray diffraction in both Bragg-Brentano and four-circle geometry. A cube-on-cube growth of the bilayers as well as the LSCO film grown at 500 degrees C confirmed that LSCO can be grown epitaxially on the lattice-matched single crystal substrate at a temperature as low as 500 degrees C, which is well compatible with existing Si process technology. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：7 / 10
页数：4
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