Carbon Nanotube Contact Plug on Silicide for CMOS Compatible Interconnect

被引：9
|
作者：
Li, Suwen [1 ]
Raju, Salahuddin [1 ]
Zhou, Changjian [1 ,2 ]
Chan, Mansun [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Hong Kong, Hong Kong, Peoples R China
[2] South China Univ Technol, Sch Elect & Informat, Guangzhou 510640, Guangdong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 06期
关键词：
Carbon nanotube (CNT); CMOS compatible; interconnect; low temperature; contact plug;
D O I：
10.1109/LED.2016.2561306
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carbon nanotube (CNT) filled contact plugs with silicide as the bottom electrode have been demonstrated in this letter. Nickel has been used as the main catalyst to achieve CMOS compatibility. By modifying the catalyst from a pure Ni single layer structure to a Ni/Al/Ni multilayer composite, uniform selective CNT growth on Ti silicide substrate has been achieved. At a low temperature of 450 degrees C, the vertically aligned CNTs with a density of 1.1 x 10(11) tubes/cm(2) inside the silicon dioxide contact plug are formed without the need of catalyst patterning. Four-point Kelvin structures are designed to measure the resistance of the CNT filled contact plugs. Measurement results show that an ohmic contact plug resistance of 216 Omega . m(2) is obtained.
引用
收藏
页码：793 / 796
页数：4
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