A S-C- / K-band Reconfigurable GaAs MMIC Power Amplifier for 5G Applications

被引:5
|
作者
Der, Adam [1 ]
Sear, William [1 ]
Popovic, Zoya [1 ]
Lasser, Gregor [1 ]
Barton, Taylor [1 ]
机构
[1] Univ Colorado, Dept Elect Comp & Energy Engn, Boulder, CO 80309 USA
关键词
GaAs; MMIC; power amplifiers; reconfigurable;
D O I
10.1109/IMS19712.2021.9574814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a power amplifier design approach for frequency reconfiguration between two arbitrarily-spaced bands. The method uses two parallel matching networks whose designs are de-coupled through the topology choice. The low-band matching network is constrained to consist of a shunt reactive element connected through quarter-wavelength transmission lines at the higher frequency. A shunt switch is placed in parallel to the matching reactance to enable isolation of this path from the high-frequency response when the switch is on. The architecture is demonstrated in a GaAs MMIC operating at C and K bands appropriate for a multi-function 5G transmitter. In CW operation at 5.8 / 22 GHz, the power amplifier achieves a power-added efficiency of 29.5 / 28 % with a corresponding output power of 20 / 20.5 % dBm and a single-stage gain of 8 / 6 dB. The amplifier is characterized with a 100-MHz LTE-like signal over a 2.8-6.8 and 18-23 GHz range.
引用
收藏
页码:873 / 876
页数:4
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