1nm of local CD accuracy for 45nm-node photomask with low sensitivity CAR for e-beam writer - art. no. 66070A

被引：3

作者：

Ugajin, Kunihiro ^{[1
]}

Saito, Masato ^{[1
]}

Suenaga, Machiko ^{[1
]}

Higaki, Tomotaka ^{[1
]}

Nishino, Hideaki ^{[1
]}

Watanabe, Hidehiro ^{[1
]}

Ikenaga, Osamu ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv ULSI Proc Engn Dept 2, Proc & Mfg Engn Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan

来源：

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XIV, PTS 1 AND 2 | 2007年 / 6607卷

关键词：

local CD; shot noise; low sensitivity CAR;

D O I：

10.1117/12.728923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We achieved highly accurate Local CD in the vicinity of 1nm with the newly developed low sensitivity chemically amplified resist (CAR) for the e-beam reticle writer, EBM-6000. We applied shot noise model to estimate Line Edge Roughness (LER). According to the estimation result, LER is improved by increasing the threshold dosage. We evaluated the performance of newly developed low sensitivity CAR. Local CD accuracy, LER, pattern resolution and drawing time are evaluated. We concluded that the performance with the low sensitivity CAR was good enough to produce photomasks for 45nm half pitch (HP) devices.

引用

页码：A6070 / A6070

页数：8