Nanostructural, optical and heterojunction characteristics of PEDOT™/ZnO nanocomposite thin films

被引:6
|
作者
Ashery, A. [1 ]
Farag, A. A. M. [2 ,3 ]
Gaballah, A. E. H. [4 ]
Said, G. [5 ]
Arafa, W. A. [6 ]
机构
[1] Natl Res Ctr, Div Phys, Dept Solid State Phys, Giza 12311, Egypt
[2] Aljouf Univ, Dept Phys, Fac Sci & Arts, Aljouf, Saudi Arabia
[3] Ain Shams Univ, Fac Educ, Dept Phys, Thin Film Lab, Cairo 11757, Egypt
[4] Natl Inst Stand, Giza, Egypt
[5] Fayoum Univ, Dept Phys, Fac Sci, Al Fayyum, Egypt
[6] Fayum Univ, Dept Chem, Fac Sci, Al Fayyum, Egypt
关键词
Nanocomposite structure; Optical parameters; Current density-voltage characteristics; Organic/inorganic heterojunction; ELECTRICAL-PROPERTIES; ZNO; COMPOSITES; GROWTH; PERFORMANCE; FABRICATION; DEPOSITION; DIODES; GAP;
D O I
10.1016/j.jallcom.2017.06.260
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Poly(3,4-ethylenedioxythiophene), Tetra Methacrylate (PEDOT T)/ZnO nanocomposite thin films were fabricated by the conventional spin coating method and characterized by X-ray diffraction technique. The results indicated that ZnO nanopowder has a polycrystalline nature with a hexagonal system and mean crystallite size of 53.1 nm. The main important optical parameters were extracted by using the spectrophotometer methodology covering the range of 200-2500 nm. A direct allowed transition with the onset and fundamental energy gaps were found to be 1.9 and 3.9 eV. The current density-voltage characteristics of PEDOT T /ZnO nanocomposite film/n-Si heterojunction showed diode-like behavior. Temperature dependence of series and shunt resistances was investigated. The high value of ideality factor (eta) can be referred to the influence of an interfacial layer. Temperature dependence of barrier height indicated the presence of inhomogeneous barrier at an interface which is considered to be the reason for the observed behavior of the barrier height with temperature. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:276 / 287
页数:12
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