Plasmonic GeSn photodetectors for enhanced photo detection at 2 μm

被引:0
|
作者
Zhou, Hao [1 ]
Zhang, Lin [1 ]
Wu, Shaoteng [1 ]
Chen, Qimiao [1 ]
Son, Bongkwon
Tan, Chuan Seng [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gold hole-array nanostructure was incorporated into GeSn photodetectors to enhance the optical absorption at 2 mu m. The surface plasmon resonance near Au/GeSn interface benefits a two times higher responsivity at 2 mu m. (c) 2021 The Author(s)
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页数:2
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