Key Parameter Identification and Defective Wafer Detection of Semiconductor Manufacturing Processes Using Image Processing Techniques

被引:20
|
作者
Fan, Shu-Kai S. [1 ]
Tsai, Du-Ming [2 ]
He, Fei [3 ]
Huang, Jui-Yu [4 ]
Jen, Chih-Hung [5 ]
机构
[1] Natl Taipei Univ Technol, Dept Ind Engn & Management, Taipei 10608, Taiwan
[2] Yuan Ze Univ, Dept Ind Engn & Management, Taoyuan 32003, Taiwan
[3] Univ Sci & Technol Beijing, Collaborat Innovat Ctr Steel Technol, Beijing 100083, Peoples R China
[4] Inst Informat Ind, Dept Digital Transformat Inst, Taipei, Taiwan
[5] Lunghwa Univ Sci & Technol, Dept Informat Management, Taoyuan 33306, Taiwan
关键词
Parameter estimation; Resistance heating; Water heating; Signal to noise ratio; Image processing; Two dimensional displays; Manufacturing processes; Key parameter identification; image processing; Fisher's criterion; Fourier transform; defective wafer detection; FAULT-DETECTION;
D O I
10.1109/TSM.2019.2929765
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The semiconductor industry has become fully automated during the manufacturing process and abundant process parameters are collected online by sensors for fault detection and classification purposes. Analyzing process parameters and identifying a smaller set of key parameters that have crucial influence on wafer quality will bring great benefits in stabilizing the manufacturing process and enhancing productive yield. Typically, this type of the parameter set is called the "raw trace data." This paper considers image processing techniques as a novel approach for analyzing and visualizing the raw trace data. First, the 1-D time series data of a wafer batch was transformed into a 2-D image. Fisher's criterion ratios of the labeled good and defective wafer image maps are computed to identify the key parameters. The key parameters identified by the proposed image processing technique are consistent with the technical experience of the process engineers. Furthermore, the texture analysis technique with 2-D Fourier transform is utilized to analyze the images of the key parameters to detect defective wafers. The proposed key parameter identification and wafer classification method proves to be a viable solution under the paradigm of advanced process control practice for semiconductor manufacturing.
引用
收藏
页码:544 / 552
页数:9
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