LONG-TERM STABILITY OF AN SiGe HBT-BASED ACTIVE COLD LOAD

被引：1
|
作者：
de la Jarrige, Emilie Leynia [1 ,2 ]
Escotte, Laurent [1 ,2 ]
Gonneau, Eric [3 ]
Goutoule, Jean-Marc [4 ]
机构：
[1] CNRS, LAAS, 7 Ave colonel Roche, F-31077 Toulouse, France
[2] Univ Toulouse 1, LAAS UTM, UTI ISAE, INP INSA UPS, F-31077 Toulouse 4, France
[3] Univ Toulouse 3, LERISM, F-31062 Toulouse, France
[4] EADS Astrium, F-31402 Toulouse, France
来源：
2011 IEEE INTERNATIONAL GEOSCIENCE AND REMOTE SENSING SYMPOSIUM (IGARSS) | 2011年
关键词：
Active cold load; noise injection radiometer; radiometer calibration; stability; RADIOMETER;
D O I：
10.1109/IGARSS.2011.6050068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, results of long-term stability of an Active Cold Load (ACL), realized at L-band with an SiGe heterojunction bipolar transistor are reported. The ACL exhibits return loss higher than 35 dB and a noise temperature less than 66 K. A noise injection radiometer has been developed to perform the measurements. A noise-equivalent delta temperature of less than 31 mK and a stability estimated to 25 mK during 95 s were obtained from Allan variance analysis. The long-term stability measurements performed over 4 months, indicate that a maximum deviation less than 0.35 K on the noise temperature is obtained with this ACL.
引用
收藏
页码：3839 / 3842
页数：4
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