Electrical transport properties of Indium chalcogenide thin films and their thermoelectric applications

In this communication, the enhancement of thermoelectric properties of In2(Te0.85Se0.15)3 thin films by Ag ion irradiation is reported. At higher fluence of 1 x 1013 ions/cm2, the maximum S value is found to -335 mVK1 at 400 K which is almost 30% greater than the pristine sample value -265 mVK1 and confirms Ag ion irradiated sample value is enhanced in comparison to pristine sample. All the Seebeck coefficient values are negative and it shows the nature of n-type behaviour. The presence of large number of scattering center limits the electrical resistivity of the material and it is consistent with morphological studies. Therefore, the charge scattering due to the grain boundary could lead to enhancement in thermoelectric properties of the irradiated films. (c) 2019 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference On Impact Of Innovations In Science And Technology For Societal Development: Materials Science.