A novel high-speed quasi-SOI power MOSFET with suppressed parasitic bipolar effect fabricated by reversed silicon wafer direct bonding

被引：7
|
作者：
Matsumoto, S
Yachi, T
Horie, H
Arimoto, Y
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.554139
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：949 / 951
页数：3
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