Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer

被引：14

作者：

Kusakabe, K ^{[1
]}

Kishino, K ^{[1
]}

Kikuchi, A ^{[1
]}

Yamada, T ^{[1
]}

Sugihara, D ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

基金：

日本学术振兴会;

关键词：

migration enhanced epitaxy; molecular beam epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)01248-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality GaN layer was obtained by insertion of high temperature grown AIN multiple intermediate layers with migration enhanced epitaxy method by the RF-plasma assisted molecular beam epitaxy on (0001) sapphire substrates. The propagating behaviors of dislocations were studied, using a transmission electron microscope. The results show that the edge dislocations were filtered at the AlN/GaN interfaces. The bending propagation of threading dislocations in GaN above AIN interlayers was confirmed. Thereby, further reduction of dislocations was achieved. Dislocation density being reduced, the drastic increase of electron mobility to 668 cm(2)/V s was obtained at the carrier density of 9.5 x 10(16)cm(-3) in Si doped GaN layer. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：387 / 391

页数：5

共 12 条

[1] Reduction of threading dislocations in RF-MBE grown polarity controlled GaN by AlN multiple interlayers
Kikuchi, A
Yamada, T
Kusakabe, K
Sugihara, D
Nakamura, S
Kishino, K
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 154 - 157
[2] Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer
Datta, R.
McAleese, C.
Cherns, P.
Rayment, F. D. G.
Humphreys, C. J.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1743 - +
[3] Reduction of threading dislocations in AlGaN layers grown on AlN/sapphire templates using high-temperature GaN interlayer
Jiang, H
Egawa, T
Hao, M
Liu, Y
APPLIED PHYSICS LETTERS, 2005, 87 (24) : 1 - 3
[4] Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors
Li, Yuan
Zhang, Chaorong
Lin, Jing
Jia, Chuanyu
Li, Guoqiang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 172
[5] Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer
Li, Liang
Yang, Lin'an
Cao, Rongtao
Xu, Sheng Rui
Zhou, Xiaowei
Xue, Junshuai
JOURNAL OF CRYSTAL GROWTH, 2014, 387 : 1 - 5
[6] Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
Che, SB
Terashima, W
Ishitani, Y
Yoshikawa, A
Matsuda, T
Ishii, H
Yoshida, S
APPLIED PHYSICS LETTERS, 2005, 86 (26) : 1 - 3
[7] Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)
Peta, Koteswara Rao
Lee, Sang-Tae
Kim, Moon-Deock
Oh, Jae-Eung
Kim, Song-Gang
Kim, Tae-Geun
JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 299 - 302
[8] Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grown AIN in MOVPE
Cao, B
Xu, K
Seo, BW
Arita, S
Nishida, S
Ishitani, Y
Yoshikawa, A
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2553 - 2556
[9] Suppression of inversion domains and decrease of threading dislocations in migration enhanced epitaxial GaN by RF-molecular beam epitaxy
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 180 (01): : 65 - 71
[10] High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (3AB): : L197 - L199

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