A theoretical comparison of the 1.3 μm doped InxGa1-xNyAs1-y/GaAs quantum well lasers for different x/y concentrations

被引：2
|
作者：
Oduncuoglu, M [1 ]
Gönül, B [1 ]
机构：
[1] Gaziantep Univ, Dept Engn Phys, TR-27310 Gaziantep, Turkey
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 27卷 / 1-2期
关键词：
III-V semiconductors; nitrides; quantum well lasers; doping;
D O I：
10.1016/j.physe.2004.11.016
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A comparative study of the InxGa1-xNyAs1-y/GaAs quantum wells (QWs) for 1.3 mu m laser emission with different x/y concentrations, has been undertaken, for the first time, involving gain characteristics with doping. By considering different x/y concentrations, we present the influence of doping on transparency carrier density, gain properties and spontaneous emission factor of 1.3 mu m InxGa1-xNyAs1-y/GaAs-strained QWs and compare with an equivalent nitrogen-free 1.3 mu m InxGa1-xAs/GaAs laser structure. This study provides useful information for the optimazition of doped InxGa1-xNyAs1-y/GaAs on the basis of 1.3 mu m emission wavelength. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：253 / 261
页数：9
相关论文
共 50 条
  • [1] On the spinodal decomposition of InxGa1-xNyAs1-y and GaSbxNyAs1-x-y alloys
    Diaz Albarran, S. F.
    Elyukhin, V. A.
    Rodriguez Peralta, P.
    Gonzalez Noguez, A. G.
    REVISTA MEXICANA DE FISICA, 2008, 54 (01) : 25 - 29
  • [2] The influence of interdiffusion on the binding energy of excitons in InxGa1-xNyAs1-y/GaAs quantum wells
    Ryczko, K
    Sek, G
    Misiewicz, J
    SUPERLATTICES AND MICROSTRUCTURES, 2005, 37 (04) : 273 - 280
  • [3] New view on InxGa1-xNyAs1-y alloys
    Elyukhin, Vyacheslav A.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 12, 2015, 12 (12): : 1372 - 1375
  • [4] Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
    Zhang, W
    Xu, YQ
    Niu, ZC
    Wu, RH
    CHINESE PHYSICS LETTERS, 2003, 20 (08) : 1261 - 1263
  • [5] Spinodal decomposition range of InxGa1-xNyAs1-y alloys
    Asomoza, R
    Elyukhin, VA
    Peña-Sierra, R
    APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1785 - 1787
  • [6] Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers
    Berti, M. (berti@padova.infm.it), 1600, American Institute of Physics Inc. (95):
  • [7] Raman characterization of strained GaNyAs1-y and InxGa1-xNyAs1-y epilayers
    Tay, LL
    Lockwood, DJ
    Gupta, JA
    Wasilewski, ZR
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 689 - 694
  • [8] Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers
    Bisognin, G
    De Salvador, D
    Mattevi, C
    Berti, M
    Drigo, AV
    Ciatto, G
    Grenouillet, L
    Duvaut, P
    Gilet, P
    Mariette, H
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (01) : 48 - 56
  • [9] Electron-related Raman scattering in dilute nitride GaAs/InxGa1-xNyAs1-y cylindrically shaped quantum dots
    Duque, C. M.
    Morales, A. L.
    Duque, C. A.
    Mora-Ramos, M. E.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 87 : 83 - 88
  • [10] Effect of bonding and static atomic displacements on composition quantification in InxGa1-xNyAs1-y
    Mueller, Knut
    Schowalter, Marco
    Rosenauer, Andreas
    Rubel, Oleg
    Volz, Kerstin
    PHYSICAL REVIEW B, 2010, 81 (07):
12345