Designs of higher tunnelling giant magnetoresistance in granular films

被引:6
|
作者
Wang, CZ [1 ]
Rong, YH
Hsu, TY
机构
[1] Liaocheng Univ, Dept Phys, Liaocheng 252059, Shandong, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
关键词
nanocrystalline materials; spin polarized transport; tunneling giant magnetoresistance; size distribution;
D O I
10.1016/j.matlet.2005.08.055
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on Inoue's model (Ref, [J. Inoue, S. Maekawa, Phys. Rev. B 53 (1996) R 11927]) and our modified model (Ref. [C.Z. Wang, Z.H.Guo, Y.H. Rong, T.Y. Hsu, Phys. Lett. A. 329(2004)236.]) on intrinsic factors of granular films influencing tunneling giant magnetoresistance (TMR), we designed various kinds of ferromagnetic metals-insulator granular films, including Fe-Al2O3, FeCo-Al2O3, CoNi-Al2O3 and FeCo-SiO2, with different ferromagnetic granules, matrices and the size distribution of ferromagnetic granules. The results indicated that the approaches obtained higher TMR are alloying, such as FeCo instead of Fe, and selection of matrix, such as Al2O3 instead of SiO2, as well as a proper size distribution of ferromagnetic granules where single domain granules should play a key role in TMR. Moreover, TMR (6.9%) of FeCo-Al2O3 granular film, so far the highest value reported at room temperature and under applied field of 12.5 K Oe, was obtained in this work. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:379 / 382
页数:4
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