Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit

被引：397

作者：

Li, Yao-Yi ^{[1
]}

Wang, Guang ^{[1
]}

Zhu, Xie-Gang ^{[1
]}

Liu, Min-Hao ^{[1
]}

Ye, Cun ^{[1
]}

Chen, Xi ^{[1
]}

Wang, Ya-Yu ^{[1
]}

He, Ke ^{[2
]}

Wang, Li-Li ^{[2
]}

Ma, Xu-Cun ^{[2
]}

Zhang, Hai-Jun ^{[2
]}

Dai, Xi ^{[2
]}

Fang, Zhong ^{[2
]}

Xie, Xin-Cheng ^{[2
]}

Liu, Ying ^{[3
]}

Qi, Xiao-Liang ^{[4
]}

Jia, Jin-Feng ^{[1
]}

Zhang, Shou-Cheng ^{[4
]}

Xue, Qi-Kun ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Dept Phys, Key Lab Atom Mol & Nanosci, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[4] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 36期

关键词：

HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; SURFACE; TRANSITION; PHASE;

D O I：

10.1002/adma.201000368

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

引用

页码：4002 / 4007

页数：6

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