Enhanced formation of thermal donors in germanium doped Czochralski silicon pretreated by rapid thermal annealing

被引：3
|
作者：
Zhu, Xin [1 ]
Yang, Deren [1 ]
Li, Ming [1 ]
Cui, Can [1 ]
Wang, Lei [1 ]
Ma, Xiangyang [1 ]
Que, Duanlin [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Sillicon Mat, Hangzhou 310027, Peoples R China
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷
关键词：
Ge doping; thermal donors; rapid thermal annealing; Czochralski silicon;
D O I：
10.4028/www.scientific.net/SSP.131-133.393
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal donor formation at 425 degrees C - 450 degrees C in Ge doped Czochralski (GCZ) silicon having about 10(16)cm(-3) Ge content pretreated by rapid thermal annealing (RTA) and conventional furnace annealing (CIA) has been investigated using low-temperature infrared spectroscopy (LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermal double donors in the initial stage of the low temperature annealing after RTA process. Ge induced additional grown-in oxygen precipitates during silicon ingot growth and the abundant self-interstitials during RTA may be the reason for the enhancement. However, after extending the annealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lower than that in the conventional CZ silicon. In final, the mechanism is also discussed.
引用
收藏
页码：393 / 397
页数：5
相关论文
共 50 条
  • [1] Intrinsic gettering based on rapid thermal annealing in germanium-doped Czochralski silicon
    Chen, Jiahe
    Yang, Deren
    Ma, Xiangyang
    Li, Hong
    Que, Duanlin
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
  • [2] Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing
    Chen, Jiahe
    Yang, Deren
    Ma, Xiangyang
    Li, Hong
    Fu, Liming
    Li, Ming
    Que, Duanlin
    JOURNAL OF CRYSTAL GROWTH, 2007, 308 (02) : 247 - 251
  • [3] Influence of rapid thermal annealing on thermal donor formation and oxygen precipitation in Czochralski silicon
    Takeno, H
    Aihara, K
    Hayamizu, Y
    Masui, T
    Suezawa, M
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 150 - 161
  • [4] HEAT PULSE ANNEALING OF THERMAL DONORS IN CZOCHRALSKI SILICON
    HAHN, S
    HUNG, D
    SHATAS, SC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C83 - C83
  • [5] RAPID THERMAL ANNEALING AND REGROWTH OF THERMAL DONORS IN SILICON
    STEIN, HJ
    SHATAS, SC
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3495 - 3502
  • [6] Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon
    Bruzzi, Mara
    Menichelli, David
    Scaringella, Monica
    Harkonen, Jaakko
    Tuovinen, Esa
    Li, Zheng
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
  • [7] INFLUENCE OF GERMANIUM ON THE FORMATION OF THERMAL DONORS IN SILICON
    DASHEVSKII, MY
    DOKUCHAEVA, AA
    ANISIMOV, KI
    INORGANIC MATERIALS, 1986, 22 (10) : 1401 - 1403
  • [8] Effect of light germanium doping on thermal donors in Czochralski silicon wafers
    Cui, Can
    Yang, Deren
    Ma, Xiangyang
    Li, Ming
    Que, Duanlin
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 110 - 113
  • [9] GENERATION OF THERMAL DONORS IN GERMANIUM-DOPED SILICON
    BABITSKII, YM
    GORBACHEVA, NI
    GRINSHTEIN, PM
    ILIN, MA
    MILVIDSKII, MG
    TUROVSKII, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 818 - 819
  • [10] Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon
    Jiahe Chen
    Deren Yang
    Xiangyang Ma
    Duanlin Que
    Applied Physics A, 2009, 94
12345